| 摘要 |
PURPOSE: A fabrication method of semiconductor devices is provided to prevent generation of micro trench when etching for forming a pad. CONSTITUTION: An insulating layer(202) is formed on a semiconductor substrate(200) having a conductive region. An opening window is formed by etching the insulating layer(202) using a mask pattern(204) as a mask, wherein C4H8, CO, Ar and O2 gas are used as the etching gas. The bottom of the opening window is planarized by etching the opening window using the mask pattern(204), wherein CF4 and Ar gas are used as etching gas. At this time, the frequency of source and bias is 13.56 MHz and the gate pulse is 10 kHz.
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