| 摘要 |
A method of fabricating lightly doped drains (LDD) of different resistance values starts by providing a semiconductor wafer, the semiconductor wafer having a first active area and a second active area positioned on the substrate. Secondly, a first gate and a second gate are formed on the first active area and the second active area, respectively. A first ion implantation process is then performed to implant dopants of a first electric type on a surface of portions of the substrate within the second active area, followed by performing a second ion implantation process to implant dopants of a second electric type on a surface of portions of the substrate within the first active area and second active area. Finally, the dopants of each electric type are activated to form a first LDD and a second LDD adjacent to the first gate and the second gate, respectively, the first LDD and the second LDD being of different resistance values.
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