| 摘要 |
PURPOSE: A fabrication method of a high voltage device is provided to improve current performance of the high voltage device by forming a channel compensating region for reducing resistance of a drift region. CONSTITUTION: After forming a well(22) in a semiconductor substrate(21), the first and second drift region(23a,23b) are formed in the well(22) spaced apart from each there. The first and second field oxide layer(25a,25b) are formed on the first drift region, the third and fourth field oxide layer(25c,25d) are formed on the second drift region, and channel compensation layers(200a,200b) are formed at lower part of the second and third field oxide layer(25b,25c), respectively. A gate oxide layer(26) and a gate electrode(27) are sequentially formed on the substrate between the second and third field oxide layer(25b,25c). Then, a source and drain junction(28a,28b) are formed in the substrate.
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