AMORPHIZED BARRIER LAYER FOR INTEGRATED CIRCUIT INTERCONNECTS

摘要

An integrated circuit and manufacturing method therefor is provided having a semiconductor substrate [200] with a semiconductor device. A dielectric layer [208] is on the semiconductor substrate [200] and has an opening provided therein. An amorphized barrier layer [226] lines the opening and a seed layer [228] is deposited to line the amorphized barrier layer [226]. A conductor core [230] fills the opening over the barrier layer [226] to form a conductor channel. The seed layer [228] is securely bonded to the amorphized barrier layer [226] and prevents electromigration along the surface between the seed and barrier layers [228, 226].