METHOD OF MEASURING COMBINED CRITICAL DIMENSION AND OVERLAY IN SINGLE STEP

摘要

A semiconductor wafer structure in a overlay pattern that permits determination of overlay and critical dimension features by CD SEM in a single pass along a given axis, comprising:a) a center feature section that provides a critical dimension point along a given axis;b) plurality of smaller sections positioned adjacent to the center feature section along the given axis that include a plurality of spaces between each of the plurality of smaller sections; andc) a plurality of displacement lines adjacent to the plurality of the smaller sections to displace a plurality of spaces.