| 摘要 |
PURPOSE: An image sensor and a method for manufacturing the same are provided to improve charge transfer efficiency and to enhance capacitance by using a ridge-shaped P0 region of a photodiode. CONSTITUTION: A transfer gate(32) having a gate spacer(33) is formed on a semiconductor substrate(30) of the first conductive type. The first impurity region(n-) of the second conductive type for a photodiode(PD) is formed in the semiconductor substrate(30) between the transfer gate(32) and a field oxide layer(31). The second impurity region(P0) of the first conductive type for the photodiode(PD) is formed on the first impurity region(n-) so as to protrude on the substrate(30). The thickness of the ridge-shaped second impurity region(P0) is 0.1-0.2 micrometer.
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