发明名称 |
Method of reinforcing a low dielectric constant material layer against damage caused by a photoresist stripper |
摘要 |
A low dielectric constant (low k) material layer is positioned on a semiconductor wafer. A first hydrogen-containing plasma treatment is performed to reinforce a surface of the low k material layer against corrosion caused by a photoresist stripper. A photoresist layer, having an opening in the photoresist layer to expose portions of the low k material layer, is then coated on the low k material layer. By dry etching the low k material layer through the opening, a pattern in the photoresist layer is transferred to the low k material layer. An ashing process with an oxygen plasma supply is then performed to ash the photoresist layer. Finally, the semiconductor wafer is dipped in a wet stripper to completely remove the photoresist layer.
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申请公布号 |
US2003008516(A1) |
申请公布日期 |
2003.01.09 |
申请号 |
US20010681985 |
申请日期 |
2001.07.03 |
申请人 |
CHANG TING-CHANG;LIU PO-TSUN;MOR YI-SHIEN |
发明人 |
CHANG TING-CHANG;LIU PO-TSUN;MOR YI-SHIEN |
分类号 |
H01L21/3105;H01L21/311;H01L21/312;H01L21/768;(IPC1-7):H01L21/302;H01L21/461 |
主分类号 |
H01L21/3105 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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