Ferroelectric memory device, e.g. ferroelectric random-access memories comprises bottom electrode patterns formed on semiconductor substrate, and first and second ferroelectric layers

摘要

A ferroelectric memory device has bottom electrode patterns formed on a semiconductor substrate, first ferroelectric layer on the substrate and disposed between the electrode patterns, and second ferroelectric layer formed on a top surface of the electrode pattern and a top surface of the first layer. An independent claim is also included for a method of fabricating the ferroelectric memory device.