| 摘要 |
PURPOSE: A fabrication method of semiconductor devices is provided to simplify manufacturing processes by forming an isolation layer and simultaneously planarizing without using additional processing. CONSTITUTION: A gate oxide layer(22), a polysilicon layer(23) and an oxidation barrier layer(24) are sequentially formed on a substrate(21). A field region is opened by selectively patterning the oxidation barrier layer and the polysilicon layer. A thermal oxide layer(26) is grown on the exposed substrate(21) of the field region by thermal oxidation processing. An SOG(Spin On Glass) layer(27) is filled into the field region. An isolation layer(267) including the SOG layer(27) and the thermal oxide layer(26) is formed by planarizing using the polysilicon layer(23) as a stopper. Then, a gate electrode(23a) is formed by selectively etching the polysilicon layer(23).
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