APPARATUS AND METHOD FOR FORMING BARRIER LAYER OF SEMICONDUCTOR DEVICE

摘要

PURPOSE: An apparatus and a method for forming a barrier layer of a semiconductor device are provided to form a TiN layer of high purity without performing an MOCVD(Metal Organic Chemical Vapor Deposition) process. CONSTITUTION: An interlayer dielectric(12) is formed on a semiconductor substrate(10). A contact hole is formed by etching and removing the interlayer dielectric(12). The semiconductor substrate(10) is loaded on a heating portion of a reaction chamber. A Ti layer(44) is deposited on a bottom face and a side face of the contact hole and a surface of the interlayer dielectric(12). A nitrogen gas supply portion supplies a nitrogen gas to a nitrogen radical generator. A microwave generator generates microwaves to the nitrogen radical generator. The nitrogen radical is supplied to a nitrogen radical implantation portion. The nitrogen radical is implanted on the semiconductor substrate(10) in order to form a TiN layer(46).