| 摘要 |
PURPOSE: A capacitor formation method of semiconductor devices is provided to improve reliability by forming a passivation layer used as a fuse on an upper electrode. CONSTITUTION: A lower electrode is formed in a capacitor oxide(31) by growing a doped silicon layer on the surface of a trench. A dielectric film(32) is deposited on the surface of the lower electrode. A CVD metal film(33) is formed on the dielectric film(32), thereby entirely filling in the trench. A conventional sputter metal film(34) is formed on the CVD metal film(33). A silicon nitride layer(36) is then formed on the conventional sputter metal film(34). Then, a passivation layer(37) is formed on the entire surface of the resultant structure.
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