| 摘要 |
PURPOSE: An MRAM(Magneto-resistive Random Access Memory) is provided to shorten the cell size of the MRAM by detecting multiple data level using a multiple data detection circuit. CONSTITUTION: The MRAM comprises a plurality of MTJFET(Magnetic Tunnel Junction FET) cells(7-1,...,7-n) connected between a bit line(BL1) and cell plates(CP) and a multiple data detection circuit(100) connected to the bit line(BL1). The multiple data detection circuit(100) further includes a current/voltage converter(110), a plurality of sense amps(120,130,140) and a data encoder(150). Thereby, the current from the MTJFET cell is converted to voltage by the current/voltage converter(110) and stored to multiple data according to the magnetization direction.
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