| 摘要 |
PURPOSE: A semiconductor device and a method for fabricating the same are provided to prevent diffusion of impurities of a source/drain region to a channel region and reduce junction depth of the source/drain region. CONSTITUTION: An isolation layer(12) is formed on a field region of a semiconductor substrate(10). A pattern of a gate insulating layer(14) is formed on an active region of the semiconductor substrate(10). A pattern of a gate electrode(16) is formed on the pattern of the gate insulating layer(14). A spacer(18) is formed at both sides of the gate insulating layer(14) and the gate electrode(16). The second conductive type source/drain region(S,D) is formed on the active region of the semiconductor substrate(10). A halo ion diffusion region(20) is formed on the substrate(10). Impurities of the second conductive type source/drain region(S,D) is not diffused to a channel region(11) by implanting halo ions such as Ge, Si, P, or In.
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