METHOD FOR FORMING COBALT LAYER

摘要

PURPOSE: A method for forming a cobalt layer is provided to perform a sputtering process by using a cobalt target having the same thickness as an aluminium target or a titanium target. CONSTITUTION: A wafer(1) is loaded on a heating portion(20) of a reaction chamber(10). A degree of vacuum of the reaction chamber(10) is lowered by using a vacuum apparatus. An RF(Radio Frequency) power supply portion(60) supplies RF power to a matching portion(70). The matching portion(70) converts the RF power to negative DC power in order to condense electrons(81) on a surface of a cobalt target(80) in order to form a strong cathode electrode. An inert gas such as an argon gas is injected into the reaction chamber(10). The plasma(5) is generated on the surface of the cobalt target(80) by the excited positive argon gas.