发明名称 HIGH MOLECULAR WEIGHT COMPOUND, RESISIT MATERIAL AND METHOD FOR FORMING PATTERN
摘要 PROBLEM TO BE SOLVED: To obtain a resist material sensitive to high energy rays, having excellent sensitivity in the wave lengths of <=200 nm, especially <=170 nm, further having improved transparency in a resist and excellent resolution, adhesivity to a substrate and plasma etching resistance. SOLUTION: A high molecular weight compound containing recurring units of formulae (1a) and (1b), or formulae (1a), (1b) and (1c) (wherein, R<1> , R<2> , R<5> to R<7> , and R<10> to R<12> are each H, F, an alkyl or a fluorinated alkyl; R<3> is F or a fluorinated alkyl; R<4> and R<8> are each H or an acid-instable group; R<9> and R<14> are each F, an alkyl or a fluorinated alkyl; R<13> is C(CF3 )2 OR<15> ; R<15> is H or an acid-unstable group; 0<a<1, 0<b<1, 0<=c<1, 0< a+b+c<=1, d is an integer of 1-4, e and f are each an integer of 0-5, and 1'he+f<=5).
申请公布号 JP2003002925(A) 申请公布日期 2003.01.08
申请号 JP20010190647 申请日期 2001.06.25
申请人 SHIN ETSU CHEM CO LTD;MATSUSHITA ELECTRIC IND CO LTD;CENTRAL GLASS CO LTD 发明人 HARADA YUJI;HATAKEYAMA JUN;KAWAI YOSHIO;SASAKO MASARU;ENDO MASATAKA;KISHIMURA SHINJI;OTANI MITSUTAKA;MIYAZAWA SATORU;TSUTSUMI KENTARO;MAEDA KAZUHIKO
分类号 G03F7/032;C08F212/14;C08F220/04;C08F220/22;G03F7/004;G03F7/039;G03F7/38;H01L21/027 主分类号 G03F7/032
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