| 摘要 |
PURPOSE: A redundancy circuit of a semiconductor memory device is provided to prevent a malfunction of the redundancy circuit by adding an MOS to an address comparison portion to use a low resistant value of the MOS. CONSTITUTION: An address signal is inputted from the outside to a pre-decoder portion in order to access a memory cell. The pre-decoder portion outputs a pre-decoded address signal. The pre-decoded signal is transmitted to an address comparison portion(100) through a signal input portion(200). An output of a fuse address is transmitted to the address comparison portion(100) through a fuse pre-decoder portion(300) after a state of a fuse is determined according to an address for repair. An initialization portion(400) initializes an output terminal of the address comparison portion(100) by a reset signal.
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