| 发明名称 |
Semiconductor device with hyper-frequency structure |
| 摘要 |
<p>A strip situated in an intermediate layer, extends into an electrically conductive cage (4) which includes a bottom plate (5) and a top plate. The strip is insulated from the cage, and a passage is provided in the cage, through which electrical connections of the strip are extended.</p> |
| 申请公布号 |
EP1274128(A1) |
申请公布日期 |
2003.01.08 |
| 申请号 |
EP20020291531 |
申请日期 |
2002.06.19 |
| 申请人 |
STMICROELECTRONICS S.A. |
发明人 |
GLORIA, DANIEL;PERROTIN, ANDRE |
| 分类号 |
H01L23/528;H01L23/66;(IPC1-7):H01L23/66 |
主分类号 |
H01L23/528 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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