| 摘要 |
PURPOSE: A method for manufacturing a capacitor of a semiconductor device is provided to increase cell capacitance and to improve step-coverage between a cell region and a peripheral region. CONSTITUTION: The first oxide layer(22) is formed on a substrate(10) having a conductive structure and an isolative structure. The first conductive layer(23) for a plate electrode is formed on the first oxide layer(22). The first conductive layer(23) and the first oxide layer(22) are selectively etched so as to define a plate formation region. The second conductive layer(26) for the plate electrode is formed at the both sidewalls of the exposed first conductive layer and the first oxide layer. An HSG(Hemi Spherical Grain)(27) is formed on the surface of the second conductive layer(26). After forming a dielectric film(28) on the HSG(27), the first storage electrode(29) is coated on the dielectric film(28). Then, the second storage electrode(30) is formed on the first storage electrode so as to connect with the conductive structure.
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