METHOD FOR FABRICATING INSULATION LAYER FOR MAGNETIC RANDOM ACCESS MEMORY

摘要

PURPOSE: A method for fabricating an insulation layer for a magnetic random access memory(MRAM) is provided to increase reliability and integration by filling a hole having no void regardless of an increased aspect ratio of a storage layer. CONSTITUTION: A magnetic tunneling adhesive layer and a passivation layer are sequentially formed on a substrate(1). A pretreatment process is performed to planarize the passivation layer. An insulation layer(6) is formed on the passivation layer by a low pressure chemical vapor deposition(LPCVD) method. An after-treatment process is performed by an in-situ process. A capping insulation layer is formed on the insulation layer. A heat treatment process is performed.