发明名称 |
SEMICONDUCTOR MEMORY DEVICE AND DATA READ METHOD OF THE SAME |
摘要 |
PURPOSE: A semiconductor memory device and a data read method of the same are provided to reduce data read errors by outputting data through different data read paths with separating a large latency operation having a relatively large request for a frequency characteristics and a small latency operation having a relatively small request for the frequency characteristics. CONSTITUTION: A semiconductor memory device includes a memory cell array(10), a current-voltage converting block(20-1 - 20-n) for converting each of current differences of a plurality of signal pairs outputted from the memory cell array(10) into voltage differences and a differential amplifying and latch block(30-1 - 30-n) for amplifying each of voltage differences of the signal pairs and outputting the amplified voltage differences. The signal pairs are obtained by latching and outputting each of the signal pairs outputted from the current-voltage converting block(20-1 - 20-n) in response to an enable signal during a first latency operation and by outputting the signal pairs outputted from the current-voltage converting block(20-1 - 20-n) in response to the enable signal during a second latency operation.
|
申请公布号 |
KR20030001597(A) |
申请公布日期 |
2003.01.08 |
申请号 |
KR20010036374 |
申请日期 |
2001.06.25 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
BAE, WON IL;KIM, BYEONG CHEOL |
分类号 |
G11C11/409;G11C7/06;(IPC1-7):G11C7/00 |
主分类号 |
G11C11/409 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|