Method for adjusting a temperature in a resist process

摘要

A test reticle with pad and antenna structures having varying critical dimensions (31-39) is provided to measure sidewall angles (1, 1') developing in resist sidewalls (3) of clear lines (5) originating from resist flow (8) due to too high temperatures in a resist process on a lithographic track after exposure of a semiconductor wafer. A scanning electron microscope is used to perform the measurement. A sequence of temperatures (T1, T2) is applied in a postbake step each to process one wafer, and the sidewall angle (1) is determined afterwards from e.g. a critical dimension measurement with a known resist thickness (11). An error signal is issued, if a threshold value of a sidewall angle is exceeded. The temperature of the resist process, e.g. postbake, is then adjusted to a temperature below the temperature causing the warning signal. <IMAGE>