发明名称 |
Non-uniform channel profile via enhanced diffusion |
摘要 |
A semiconductor device with reduced leakage current is obtained by forming a non-uniform channel doping profile. A high impurity region of the opposite conductive type of a source region is formed between the channel region and source region by transient enhanced diffusion (TED). The high impurity region substantially reduces the threshold voltage rolling off problem.
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申请公布号 |
US6503801(B1) |
申请公布日期 |
2003.01.07 |
申请号 |
US20000640186 |
申请日期 |
2000.08.17 |
申请人 |
ADVANCED MICRO DEVICES, INC. |
发明人 |
ROUSE RICHARD P.;NG CHE-HOO;AN JUDY X. |
分类号 |
H01L21/265;H01L21/336;H01L29/10;(IPC1-7):H01L21/336 |
主分类号 |
H01L21/265 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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