Integrated memory having memory cells with a magnetoresistive storage property and method of operating such a memory

摘要

An integrated memory has memory cells with a magnetoresistive storage property. The memory cells are connected in each case between column lines and row lines. For reading a data signal of a memory cell connected to a row line, one of the row lines is connected in a selection circuit to a terminal for a selection signal. The other row lines are driven in such a way that they are electrically isolated in the selection circuit for the reading of the data signal. As a result, a comparatively reliable reading operation is possible.