| 摘要 |
PROBLEM TO BE SOLVED: To mass produce photosemiconductor devices, while enhancing utiliza tion efficiency of light by depositing a nitride semiconductor on a first major surface of a translucent substrate and employing a curved shape exhibiting lens effect, at least partially in a second major surface facing the first major surface. SOLUTION: A plurality of insular nitride semiconductor layers 102 are formed on a semiconductor wafer 100 by forming an etching face 130 from the surface side 151 of the nitride semiconductor until the boundary face to a sapphire substrate 101 for making a trench 103 is exposed. After the sapphire substrate 101 has been polished, the nitride semiconductor wafer 100 is secured onto a table being freely derivable in the horizontal direction, with the rear side 152 of the sapphire substrate 101 directed upwards. Next, trenches 103 are made vertically and horizontally in the bottom face of the sapphire substrate 101 substantially uniformly. Finally, the rear side 152 of the sapphire substrate 101 is polished using a single side polishing machine and abrasive to form a curved shape 104 exhibiting lens effect. |
