| 摘要 |
A method of forming a thin film transistor comprises providing first electrode layers (42) over a transparent substrate (40), the first electrode layers comprising a lower transparent layer (42a), and an upper opaque layer (42b). The first electrode layers are patterned to define a first electrode pattern in which an edge region of the transparent layer (42a) extends beyond an edge region of the opaque layer (42b). A transistor body region comprising a semiconductor layer (16) defining the channel area of the transistor and a gate insulator layer (18) is provided over the first electrode pattern (42). A transparent second electrode layer (46) is also provided. A negative resist (70) is exposed through the substrate (40), with regions of the negative resist layer (70) shadowed by the opaque layer (42b) of the first electrode pattern (42) remaining unexposed. These regions and the underlying second electrode layer (46) are removed to define a second electrode pattern which is substantially aligned with the opaque layer (42b) of the first electrode pattern (42).The method can be used for top or bottom gate TFTs and provides a self aligned gate structure with overlap between the source/drain and the gate, so that no additional processing of the semiconductor body is required.
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