| 摘要 |
An electron beam lithography apparatus includes (a) an electron beam source emitting an electron beam, (b) a wafer stage on which a wafer is to be mounted and which is horizontally movable, (c) a horizontally movable mask located above the wafer stage, the electron beam passing through the mask and reaching the wafer, the mask having areas in each of which a divisional pattern is formed, the divisional pattern being obtained by dividing a pattern to be written, in accordance with an area density, and (d) a controller which controls a speed of at least one of the mask and the wafer stage for each of the areas in accordance with the area density. The electron beam lithography apparatus can make it possible to compensate for the proximity effect in each of the areas of the mask, ensuring to write a minute pattern with high accuracy.
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