| 发明名称 |
Magnetic memory element and magnetic memory using the same |
| 摘要 |
A magnetic memory element has a first ferromagnetic layer, a second ferromagnetic layer, and a non-magnetic layer disposed between these ferromagnetic layers. The non-magnetic layer has an electrical characteristic that is changeable depending on an external magnetic field applied to the non-magnetic layer.
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| 申请公布号 |
US6504197(B2) |
申请公布日期 |
2003.01.07 |
| 申请号 |
US20010810862 |
申请日期 |
2001.03.16 |
| 申请人 |
SHARP KABUSHIKI KAISHA |
发明人 |
MINAKATA RYOJI;MICHIJIMA MASASHI;HAYASHI HIDEKAZU |
| 分类号 |
G11C11/15;H01F10/08;H01F10/32;H01L21/8246;H01L27/10;H01L27/105;H01L43/08;(IPC1-7):H01L29/72 |
主分类号 |
G11C11/15 |
| 代理机构 |
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代理人 |
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