发明名称 Method of rinsing residual etching reactants/products on a semiconductor wafer
摘要 An etching machine comprises a cleaning solution sprayer, further comprising at least a first nozzle positioned above a center of the wafer and a second nozzle positioned above an edge of the wafer. The semiconductor wafer is spun and simultaneously a cleaning solution is sprayed on the center and the edge of the wafer via the first nozzle and the second nozzle, respectively, to evenly rinse the residual etching solution on the surface of the wafer. The semiconductor wafer is spun dry with a nitrogen purge on the wafer surface at the end of the method.
申请公布号 US6503837(B2) 申请公布日期 2003.01.07
申请号 US20010820314 申请日期 2001.03.29
申请人 MACRONIX INTERNATIONAL CO. LTD. 发明人 CHIOU JIANN-JEN
分类号 H01L21/00;H01L21/02;(IPC1-7):B08B3/02 主分类号 H01L21/00
代理机构 代理人
主权项
地址