| 摘要 |
PURPOSE: A method of forming a nano-device for an MRAM(Magnetic Random Access Memory) by using atomic layer deposition is provided to improve surface roughness and thickness uniformity by depositing an MR(Magneto-Resistance) film and an oxide layer by using an ALD(Atomic Layer Deposition). CONSTITUTION: An interlayer dielectric(12) having a contact plug(13) is formed on a substrate(10). After cleaning the resultant structure, a lower MR thin film(14) is formed on the resultant structure to connect with the contact plug(13). An intermediate oxide layer(15) and an upper MR film(16) are sequentially formed on the lower MR thin film(14). The lower MR film(14), the intermediate oxide layer(15) and the upper MR film(16) are deposited by using an ALD method at low temperature of 300-400°C.
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