| 摘要 |
PURPOSE: A method for forming bit lines is provided to improve an integration degree and to prevent reduction of photoresist thickness by using an ArF photoresist. CONSTITUTION: After forming a first interlayer dielectric(82) on a substrate(80) having an active layer(81), a bit line contact plug(83) is formed by selectively etching the first interlayer dielectric(82). A second interlayer dielectric(84) and an ArF photoresist pattern are sequentially formed on the resultant structure. By reflowing the ArF photoresist pattern, polymer is formed on the ArF photoresist pattern. A contact hole is formed to expose the surface of the bit line contact plug(83) by selectively etching the second interlayer dielectric(84) using the reflown ArF photoresist pattern as a mask. A bit line(88) is formed in the contact hole.
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