| 摘要 |
PURPOSE: A self refresh apparatus and a semiconductor memory device using the same are provided to reduce current consumption by using the self refresh apparatus. CONSTITUTION: A refresh control signal generation portion(RFCTRL) is operated by a refresh mode signal(rfsh_en) in order to generate a refresh control signal(rfctrl). A refresh period determination portion(RFPRD) generates a signal(rfpdst) for determining a refresh period. The refresh period determination portion(RFPRD) is formed with a refresh period signal generation portion(RFFREQ), a period setting fuse portion(PRDFUSE), and a plurality of logic gates. The refresh period signal generation portion(RFFREQ) is operated by the refresh control signal(rfctrl). The refresh period signal generation portion(RFFREQ) generates a plurality of refresh period signals(osc1u,osc2u). The period setting fuse portion(PRDFUSE) is used for setting the refresh period. A refresh period signal delay portion(RFSHDLY) delays a refresh period determination signal(rfpdst) and outputs a delayed signal to the refresh driving signal generation portion(RFSHGEN). The refresh driving signal generation portion(RFSHGEN) generates a refresh driving signal(rfsh).
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