MULTICHANNEL SPECTRUM ANALYZER FOR REAL TIME PLASMA MONITORING AND THIN FILM ANALYSIS IN SEMICONDUCTOR MANUFACTURING PROCESS

摘要

PURPOSE: A multichannel spectrum analyzer for real time plasma monitoring and thin film analysis in semiconductor manufacturing process are provided to measure transformation of the thin film by measuring interference spectrum of reflected light of a sample thin film in a plasma etch process, and to precisely determine an end point of a plasma dry etch process by measuring emission spectrum of plasma in real time. CONSTITUTION: The interference spectrum of the reflected light is measured through an optical fiber connected to the upper portion of a plasma reactor(4) by using a lamp having a broad range of wavelength. The optical emission spectrum is measured through an optical fiber connected to the side surface of the plasma reactor. The interference spectrum of the reflected light and the optical emission spectrum are measured by a high speed multichannel spectroscopic method of an optical sensor array.