| 摘要 |
PURPOSE: A polysilicon film forming method is provided to increase the yield rate of TFTs(Thin Film Transistors) operating at high speed and fluctuating little by restricting separation of polysilicon film making of uniform silicon crystal. CONSTITUTION: A polysilicon film forming method includes the step of forming a polysilicon film by scanning a laser irradiation region while irradiating a continuous wave laser onto an amorphous silicon film(12) formed into an island or ribbon-like shape on a substrate(10). If the width of a rectangle in which the amorphous silicon film is inscribed is less than 30 micrometer, any one condition that a top end shape of a pattern is a convex shape, a top end shape is a concave shape and has three corner portions at a top end side with straight lines, and both angles of the corner portions on both sides of the top end shape are set to 45 angular degrees or more, a top end shape is a concave shape and comprises curved lines, or the width of a top end portion is below 25 micrometer, is satisfied. |
