| 摘要 |
PURPOSE: A metal interconnection formation method of a semiconductor device is provided to prevent the generation of voids and to control a CD(Critical Dimension) bias by using a polymer formed at sidewalls of an anti-reflective layer. CONSTITUTION: A lower barrier layer(102), a metal film(104) and an anti-reflective layer(106) are sequentially formed on a semiconductor substrate(100). The anti-reflective layer(106) is partially etched using an etch mask. The anti-reflective layer(106) is repeatedly etched so as to expose the surface of the metal film(104) by using the etch mask. At this time, polymers are formed at both sidewalls of the anti-reflective layer(106) and on the exposed metal film(104). Then, a main etch processing is performed, thereby a metal pattern(112) is formed.
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