| 摘要 |
PURPOSE: A method for fabricating an isolation layer of a semiconductor device is provided to prevent a moat phenomenon in which the isolation layer becomes lower than an active region of a semiconductor substrate, by preventing the isolation layer from being lost in subsequent etch process and cleaning process. CONSTITUTION: A stack structure composed of a pad oxide layer(13) and a nitride layer is formed on the semiconductor substrate(11). The stack structure and a predetermined thickness of the substrate are etched to form a nitride layer pattern, a pad oxide layer pattern and a trench by using an isolation mask as an etch mask. A predetermined thickness of a thermal oxide layer(21) is formed on the trench. The nitride layer pattern is blank-etched by a predetermined thickness while a part of the upper corner of the trench is exposed to prevent a loss of the side surface of the isolation layer(24) formed in a subsequent process. A buried insulation layer is formed on the resultant structure. The buried insulation layer is planarized to form the isolation layer buried in the trench. The nitride layer pattern is eliminated.
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