| 摘要 |
PURPOSE: A fabrication method of a ruthenium film using CVD(Chemical Vapor Deposition) is provided to improve a deposition rate, a morphology and a leakage current. CONSTITUTION: A substrate having a BST dielectric film is loaded in a reaction chamber of a CVD apparatus(21). A nucleation processing of ruthenium film is performed by flowing Ru(od)3 source into the substrate(22). Then, a ruthenium film is grown on the substrate by flowing Ru(EtCp)2 source gas(23). The flow rate of Ru(od)3 source is 0.05-0.5 ml/minute, and the flow rate of Ru(EtCp)2 source is 0.05-0.5 ml/minute.
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