METHOD FOR POST-TREATING METAL INTERCONNECTION OF SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for post-treating a metal interconnection of a semiconductor device is provided to control diffusion of fluorine while guaranteeing an insulation property, and to reduce the stress between the metal interconnection and a lower barrier layer by using an aluminum oxide layer as the lower barrier layer for protecting the metal interconnection. CONSTITUTION: A deposition process is performed to form aluminum of a predetermined thickness on the entire surface of a substrate(102) having the metal interconnection(104). A plasma process is carried out under a predetermined process condition to transform the aluminum into a lower barrier layer formed of an aluminum oxide layer. A deposition process is performed to form a delayed compensation layer(108) on the entire surface of the lower barrier layer.