| 摘要 |
PURPOSE: A method for forming a photodiode of an image sensor is provided to minimize a dark current by removing a neutral charge existing in an n- region. CONSTITUTION: A gate electrode(23) is formed on a semiconductor layer(20) between a photodiode region(PD) and a floating diffusion region(FD). The first doping region(n-) is formed in the photodiode region(PD). The second doping region(P01) is formed to contact with the surface of the semiconductor layer(20) by implanting dopants into the first doping region(n-). After forming a spacer(24) at both sidewalls of the gate electrode(23), the third doping region(P02) is formed at lower portion of the second doping region by implanting dopants into the first doping region(n-).
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