Mask for manufacture of semiconductor device has imaging region and second region with second exposure mask obtained by replication of part of exposure mask in imaging region

摘要

The mask (10) has an imaging region (12), with an exposure mask for exposure of the surface of the semiconductor device and a second region (11) with a second exposure mask provided by replication of at least part of the first exposure mask, e.g. by replication of a test structure incorporated within the first exposure mask. An Independent claim for a manufacturing method for a mask used for manufacture of a semiconductor device is also included.