| 发明名称 |
Semiconductor device and the manufacturing method thereof |
| 摘要 |
A semiconductor device has a bump electrode formed on a flat surface of a passivation film of the device. The bump electrode is connected to a top wiring layer through a plurality of openings in the passivation film underneath the bump electrode, which are filled with a conductive material. The bump electrode is formed away from via holes, which connects the top wiring layer for the bump electrode and a lower wiring layer connected to source and drain layers of the device. |
| 申请公布号 |
US2003001226(A1) |
申请公布日期 |
2003.01.02 |
| 申请号 |
US20020183980 |
申请日期 |
2002.06.28 |
| 申请人 |
SHINOGI HIROYUKI;TANIGUCHI TOSHIMITSU |
发明人 |
SHINOGI HIROYUKI;TANIGUCHI TOSHIMITSU |
| 分类号 |
H01L23/52;H01L21/3205;H01L21/60;H01L21/822;H01L21/8238;H01L23/485;H01L27/04;H01L27/092;H01L29/78;(IPC1-7):H01L29/00 |
主分类号 |
H01L23/52 |
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