发明名称 Semiconductor device incorporating hemispherical solid immersion lens, apparatus and method for manufacturing the same
摘要 In a semiconductor device having a front surface where circuits are formed and a back surface, a hemispherical solid immersion lens is formed at the back surface of the semiconductor device in a body with the semiconductor device.
申请公布号 US2003000917(A1) 申请公布日期 2003.01.02
申请号 US20020230490 申请日期 2002.08.29
申请人 NEC CORPORATION 发明人 KITAHATA HIDEKI
分类号 G01N21/956;B24B1/00;B28D5/02;H01L21/304;H01L21/66;H01L27/146;(IPC1-7):H01B13/00 主分类号 G01N21/956
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