发明名称 Semiconductor device and method of manufacture thereof
摘要 In order to form an aluminum system wiring that does not peel off on an insulating film containing fluorine and to improve the reliability thereof, a semiconductor device according to the present invention includes an insulating film (14) containing fluorine formed on a substrate (11), a titanium aluminum alloy film (17a) formed on the insulating film (14) containing fluorine, and a metallic film (17b) comprising aluminum or an aluminum alloy formed on the titanium aluminum alloy film (17a).
申请公布号 US2003001276(A1) 申请公布日期 2003.01.02
申请号 US20020182661 申请日期 2002.07.31
申请人 ENOMOTO YOSHIYUKI;KANAMURA RYUICHI 发明人 ENOMOTO YOSHIYUKI;KANAMURA RYUICHI
分类号 H01L23/52;H01L21/312;H01L21/316;H01L21/3205;H01L21/4763;H01L21/768;H01L23/48;H01L23/522;H01L23/532;(IPC1-7):H01L21/44;H01L29/40 主分类号 H01L23/52
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