Method and apparatus for manufacturing a barrier layer of semiconductor device

摘要

Disclosed is a method and an apparatus for manufacturing a barrier layer of semiconductor device. The disclosed comprises the steps of: forming an interlayer insulating layer having a contact hole on a semiconductor substrate; forming a Ti layer on the contact hole and on the interlayer insulating layer; and reacting the Ti layer with nitrogen radical to transform a part of the Ti layer into a TiN layer.