发明名称 |
Apparatus for providing high performance electrostatic discharge protection |
摘要 |
Apparatus for providing electrostatic discharge protection having an nMOS transistor with bias simultaneously applied to the gate and the p-well of the nMOS transistor. A bias circuit is fabricated using a plurality of the Zener diodes. The double bias allows for a relatively high gate voltage to be applied to the nMOS transistor enabling the nMOS transistor to be biased to optimum conditions for bipolar snapback.
|
申请公布号 |
US6501632(B1) |
申请公布日期 |
2002.12.31 |
申请号 |
US20000632414 |
申请日期 |
2000.08.04 |
申请人 |
SARNOFF CORPORATION |
发明人 |
AVERY LESLIE RONALD;RUSS CHRISTIAN CORNELIUS |
分类号 |
H01L27/02;H02H3/22;(IPC1-7):H02H3/22 |
主分类号 |
H01L27/02 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|