| 摘要 |
PURPOSE: An apparatus and a method for depositing a thin film of a semiconductor device are provided to minimize a thermal impact applied to a wafer and form an improved thin film by using a thin film deposition apparatus. CONSTITUTION: A chamber includes an inflow tube(112) connected with a gas supply portion(140), an exhaust tube(114), and a pump(P). A chuck(120) for supporting a wafer(5) is installed in the inside of the chamber. The first heater(122) is installed in the inside of the chuck(120). The gas supply portion(140) includes the first and the second gas storage devices(142,146) for storing the first and the second gases(S1,S2). The first gas storage device(142) is connected with the inflow tube(112) through the first and the second connection tubes(162,164). The second gas storage device(146) is connected with the inflow tube(112) through the third connection tube(166). The first to the third gas flow controllers(144,145,148) are installed on the first to the third connection tubes(162,164,166). A gas preprocess portion(160) is installed on one of the first connection tube(162) or the second connection tube(164) for connecting the first and the second gas flow controllers(144,145) with the inflow tube(112).
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