| 摘要 |
A spin-valve transistor has an emitter, a base including a spin-valve film in which two magnetic layers are stacked with interposing a nonmagnetic layer between the two magnetic layers, and a collector, the spin-valve film having a stacked structure of M/A/M' or M/B/M' and the spin-valve film being (100)-oriented, where each of M and M' includes at least one element selected from the group consisting of Fe, Co, Ni and an alloy including Fe, Co, Ni, A includes at least one element selected from the group consisting of Au, Ag, Pt, Cu and Al, and B includes at least one element selected from the group consisting of Cr and Mn.
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