发明名称 |
Atomic layer barrier layer for integrated circuit interconnects |
摘要 |
An integrated circuit and manufacturing method therefor is provided having a semiconductor substrate with a semiconductor device. A dielectric layer is on the semiconductor substrate and has an opening provided therein. A barrier layer lines the opening and has a first amorphized atomic layer of a barrier compound and a second atomic layer of a barrier metal. A seed layer is deposited to line the amorphized barrier layer. A conductor core fills the opening over the barrier layer to form a conductor channel. The seed layer is securely bonded to the amorphized barrier layer and prevents electromigration along the surface between the seed and barrier layers.
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申请公布号 |
US6501177(B1) |
申请公布日期 |
2002.12.31 |
申请号 |
US20000678946 |
申请日期 |
2000.10.03 |
申请人 |
ADVANCED MICRO DEVICES, INC. |
发明人 |
LOPATIN SERGEY D.;NGO MINH VAN;TRAN MINH QUOC |
分类号 |
H01L21/768;(IPC1-7):H01L24/48 |
主分类号 |
H01L21/768 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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