发明名称 Compounds for forming alumina films using chemical vapor deposition method and process for preparing the compound
摘要 Organometallic compounds useful for forming aluminum films by chemical vapor deposition are disclosed. Also disclosed are methods of preparing the organometallic compound and methods of forming aluminum films. The compounds are selected from R'R''R'''Al:Ln wherein R', R'', R''' are independently selected from alkyl, perfluroalkyl or alkoxy or borate. L is one or more organic Lewis bases selected from thiophene, thriopyran and,oras defined in the instant specification.
申请公布号 US6500250(B1) 申请公布日期 2002.12.31
申请号 US20020135190 申请日期 2002.04.29
申请人 ROHN AND HAAS COMPANY 发明人 SHIN HYUN-KOOCK
分类号 C07D295/02;C07D295/033;C07F5/06;C23C16/40;(IPC1-7):C07O207/00;C07O333/46;B05D5/12 主分类号 C07D295/02
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