Germanium-on-insulator (GOI) device

摘要

A germanium-on-insulator (GOI) device formed on a GOI structure with a buried oxide (BOX) layer disposed therein and an active layer disposed on the BOX layer having active regions defined by isolation trenches and the BOX layer. The GOI device includes a gate formed over one of the active regions. The gate defines a channel interposed between a source and a drain formed within one of the active regions.