| 摘要 |
PURPOSE: A trench isolation layer of semiconductor devices and a method for manufacturing the same are provided to restrain stress of a gap-fill oxide layer by forming multilayer gap-fill oxide using HDP(High Density Plasma) and PECVD(Plasma Enhancement CVD). CONSTITUTION: A pad oxide layer(102) and a nitride layer are sequentially formed on a semiconductor substrate(100). A trench is formed by etching the semiconductor substrate(100). A first gap-fill oxide layer(110') is formed in the trench by using a PECVD. A second gap-fill oxide layer(112') and a third gap-fill oxide layer(114') are sequentially filled into the trench by using an HDP and PECVD, respectively. The first, second and third gap-fill oxide layer(110',112',114') are then planarized. Then, the nitride layer is removed.
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